In investigating the passivation effect of the a-Si:H shell, we f

In investigating the passivation effect of the a-Si:H shell, we find that the combination

of the a-Si:H shell and SiNW solar cell leads to enhanced power conversion efficiency, open-circuit voltage, and short-circuit current by more than selleck screening library 37%, 15%, and 12%, respectively, compared to the SiNW cells. This is mainly due to the suppression of the surface recombination of the large surface area of SiNWs. We expect that the a-Si:H will have a significant role in passivation of the SiNW surface with more optimization of its thickness and more theoretical understanding of its interface with SiNWs. Acknowledgements This work has been funded by the Ministry of Science, Technology and Innovation, Malaysia, and Solar Energy Research Institute (SERI), UKM. References 1. Huia S, Zhang J, Chena X, Xua H, Maa D, Liua Y, Taoa B: Study of an amperometric glucose sensor based on Pd–Ni/SiNW electrode. Sensor Actuator B Chem 2011, 155:592–597.CrossRef 2. Zaremba-Tymieniecki M, Li C, Fobelets K, Durrani ZAK: Field-effect transistors using

silicon nanowires prepared by electroless chemical etching. IEEE Electron Device Lett 2010, 31:860–862.CrossRef drug discovery 3. Huang Z, Zhang X, Reiche M, Liu L, Lee W, Shimizu T, Senz S, Gösele U: Extended arrays of vertically aligned sub-10 nm diameter [100] Si nanowires by metal-assisted chemical etching. Nano Lett 2011, 8:3046–3051.CrossRef 4. Jung JY, Guo Z, Jee SW, Um HD, Park KT, Hyun MS: A waferscale Si wire solar cell using radial and bulk p–n junctions. Nanotechnology 2010, 21:5303–5306. 5. Kumar D, Srivastava SK, Singh PK, Husain M, Kumar V: Fabrication of silicon Amisulpride nanowire arrays based solar cell with improved performance. Sol Energy Mater Sol Cells 2011, 95:215–218.CrossRef 6. Peng K, Xu Y, Wu Y, Yan Y, Lee ST, Zu J: Aligned single crystalline silicon nanowire arrays for photovoltaic applications. Small 2005, 1:1062–1067.CrossRef 7. Kodambaka S, Tersoff J, Reuter CM,

Ross MF: Diameter-independent kinetics in the vapor–liquid-solid growth of Si nanowires. Phys Rev Lett 2006, 96:6105–6108.CrossRef 8. Zhang YF, Tang YF, Wang N, Lee CS, Bello I, Lee ST: Silicon nanowires prepared by laser ablation at high temperature. Appl Phys Lett 1998, 72:1835–1837.CrossRef 9. Niu J, Sha J, Yang D: Silicon nanowires fabricated by thermal evaporation of silicon monoxide. Phys E 2004, 23:131–134.CrossRef 10. Holmes DJ, Johnston PK, Doty CR, Korgel AB: Control of thickness and orientation of solution-grown silicon nanowires. Science 2000, 287:1471–1473.CrossRef 11. Huang Z, Fang H, Zhu J: Fabrication of silicon nanowire arrays with controlled diameter, length, and density. J Adv Mater 2007, 19:744–19748.CrossRef 12. Dai AH, Chang CH, Lai YC, Lin AC, Chung JR, Lin RG, He HJ: Subwavelength Si nanowire arrays for self-cleaning antireflection coatings. J Mater Chem 2010, 20:10924–10930.CrossRef 13.

Comments are closed.