The average diffusion Vistusertib concentration coefficients were estimated by fitting the depth profiles with Equation 2. Red lines in Figure 1 indicate the fitting curves based on Equation 2. The calculated diffusion coefficients
for each temperature were described by dots in Figure 2. The diffusion coefficient obeys Arrhenius law: (3) where D 0 denotes the preexponential factor, ΔE is the activation energy, and k B is the Boltzmann constant. From the result of the fitting by least squares method, D 0 this website and ΔE were estimated as 3.93 × 10-7 cm2/s and 0.81 eV, respectively. The calculated diffusion coefficients of single-crystal silicon by van Wieringen et al.  and the estimated diffusion coefficients of an a-SiC thin film with hydrogen concentration of 0.4 ± 0.1 at.% by Schmidt et al.  are also described in Figure 2. D 0 and ΔE for single-crystal silicon and the a-SiC thin film are 9.67 × 103 cm2/s and 0.48 eV and 0.71 cm2/s and 3.2 eV, respectively. Compared with these ΔE values, ΔE for Si-QDSL is relatively close to the ΔE for single-crystal Si. Such small ΔE indicates
that the interstitial diffusion in Si-QDs is dominant because the thickness of the a-SiCO layers is too thin to work as barriers against hydrogen diffusion; this is due to the wide band gap and polar bonds of a-SiC . Figure 1 Depth profiles of hydrogen concentrations. (a) At 300°C for 20 min. (b) At 400°C for 10 min. (c) At 500°C Erismodegib order for 3 min. (d) At 600°C for 1 min. Figure 2 Arrhenius plot of diffusion coefficient of hydrogen in Si-QDSLs. The calculated diffusion coefficients of single-crystal silicon by van Wieringen et al.  and the estimated diffusion coefficients of an a-SiC thin film with hydrogen concentration of 0.4 ± 0.1 at.% by Schmidt et al.  are also described. From the depth profiles
of Si-QDSLs for a treatment temperature of 600°C, hydrogen concentration was found to drastically decrease. Saturation hydrogen concentration after sufficient treatment was estimated at approximately 1.0 × 1021 cm-3, indicating that the hydrogen concentration at the surface drastically decreases because the loss of adsorbed hydrogen atoms is dominant at high temperatures. The defect densities of Si-QDSLs during after 60-min HPT for several treatment temperatures were measured by ESR. The defect densities originating from silicon dangling bonds (Si-DBs) and carbon dangling bonds (C-DBs) were also estimated. The waveform separation of the obtained differentiated waves originating from both Si-DBs and C-DBs were so difficult that the ratios between the densities of Si-DBs and C-DBs were estimated by the following equations : (4) (5) and (6) where N Total-DB, N Si-DB, and N C-DB are the densities of total dangling bonds (Total-DBs), Si-DBs, and C-DBs, respectively. y is the ratio of N C-DB to N Si-DB and x is the composition ratio of C to Si.